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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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TDF8599BTH датащи(PDF) 39 Page - NXP Semiconductors |
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TDF8599BTH датащи(HTML) 39 Page - NXP Semiconductors |
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39 / 54 page  TDF8599B_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 29 July 2009 39 of 54 NXP Semiconductors TDF8599B I2C-bus controlled dual channel class-D power amplifier (1) VP =24V; RL =2 Ω at 1 W. (2) VP =24V; RL =2 Ω at 10 W. Fig 36. THD + N as a function of frequency with a 2 Ω load, BD modulation; VP = 24 V Fig 37. Gain as a function of frequency f = 1 kHz; RL =2 Ω. (1) THD = 10 %. (2) THD=3%. (3) THD=1%. f = 1 kHz; RL =4 Ω. (1) THD = 10 %. (2) THD = 3 %. (3) THD = 1 %. Fig 38. Output power as a function of supply voltage with a 2 Ω load Fig 39. Output power as a function of supply voltage with a 4 Ω load 001aak241 10−1 10−2 1 THD + N (%) 10−3 f (Hz) 10 105 104 102 103 (1) (2) 001aak240 24 26 22 28 30 G (dB) 20 f (Hz) 10 105 104 102 103 VP (V) 10 26 22 14 18 001aak243 40 80 120 Po (W) 0 (1) (2) (3) VP (V) 10 26 22 14 18 001aak242 40 20 60 80 Po (W) 0 (1) (2) (3) |
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