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TRF8010 датащи(PDF) 1 Page - Texas Instruments |
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TRF8010 датащи(HTML) 1 Page - Texas Instruments |
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1 / 10 page ![]() TRF8010 900-MHz RF TRANSMIT DRIVER SLWS031B – JULY 1996– REVISED MAY 1997 1 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 D Operates from 3.6-V and 4.8-V Power Supplies for AMPS/NADC and GSM Applications Respectively D Unconditionally Stable D Wide UHF Frequency Range 800 MHz to 1000 MHz D 21 dBm and 23 dBm Typical Output Power in AMPS/NADC and GSM Applications Respectively D Linear Ramp Control D Transmit Enable/Disable Control D Advanced BiCMOS Processing Technology for Low-Power Consumption, High Efficiency, and Highly Linear Operation D Minimum of External Components Required for Operation D Surface-Mount Thermally Enhanced Package for Extremely Small Circuit Footprint description The TRF8010 is an RF transmit driver amplifier for 900-MHz digital, analog, and dual-mode communication applications. It consists of a two-stage amplifier and a linear ramp controller for burst control in TDMA (time division multiple access) applications. Very few external components are required for operation. The TRF8010 amplifies the RF signal from the preceding modulator and upconverter stages in an RF section of a transmitter to a level that is sufficient to drive a final RF power output device. The output impedance of RFOUT is approximately 50 Ω. But, since RFOUT is connected to an open-collector output device, minimal external matching is required. The device is enabled when the TXEN input is held high. A power control signal applied to the VPC input can ramp the RF output power up or down to meet ramp and spurious emission specifications in TDMA systems. The power control signal causes a linear change in output power as the voltage applied to VPC varies between 0 V and 3 V. With the RF input power applied to RFIN at 0 dBm and TXEN high, adjusting VPC from 0 V to 3 V increases the output power from a typical value of –54 dBm at VPC = 0 V to the output power appropriate for the application: D 21 dBm typical for AMPS/NADC (Advanced Mobile Phone Service/North American Digital Cellular) operation D 23 dBm typical for GSM (Global System for Mobile Communications) operation Forward isolation with the RF input power applied to RFIN at 0 dBm, VPC = 0 V, and TXEN high is typically greater than 50 dB. These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 GND GND RFIN GND NC VPC GND NC VBB GND GND GND RFOUT GND GND TXEN GND VCC VCC GND PWP PACKAGE (TOP VIEW) NC – No internal connection PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 1997, Texas Instruments Incorporated |
Аналогичный номер детали - TRF8010 |
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Аналогичное описание - TRF8010 |
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