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DMS2220LFDB датащи(PDF) 2 Page - Diodes Incorporated

номер детали DMS2220LFDB
подробное описание детали  P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SBR짰 SUPER BARRIER RECTIFIER
PDF  6 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMS2220LFDB датащи(HTML) 2 Page - Diodes Incorporated

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DMS2220LFDB
Document number: DS31546 Rev. 6 - 2
2 of 6
www.diodes.com
March 2009
© Diodes Incorporated
DMS2220LFDB
SBR is a registered trademark of Diodes Incorporated.
Electrical Characteristics – P-CHANNEL MOSFET – Q1 @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
BVDSS
-20
⎯
⎯
V
VGS = 0V, ID = -250μA
Zero Gate Voltage Drain Current
IDSS
⎯
⎯
-1
μA
VDS = -20V, VGS = 0V
Gate-Source Leakage
IGSS
⎯
⎯
⎯
⎯
±100
±800
nA
VGS = ±8V, VDS = 0V
VGS = ±12V, VDS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
VGS(th)
-0.45
⎯
-1.3
V
VDS = VGS, ID = -250μA
Static Drain-Source On-Resistance
RDS (ON)
⎯
⎯
⎯
60
74
86
95
120
⎯
m
Ω
VGS = -4.5V, ID = -2.8A
VGS = -2.5V, ID = -2.0A
VGS = -1.8V, ID = -1.0A
Forward Transfer Admittance
|Yfs|
⎯
8
⎯
S
VDS = -5V, ID = -2.8A
Diode Forward Voltage (Note 5)
VSD
⎯
0.7
-1.2
V
VGS = 0V, IS = -1.6A
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
⎯
632
⎯
pF
VDS = -10V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
⎯
65
⎯
pF
Reverse Transfer Capacitance
Crss
⎯
54
⎯
pF
Electrical Characteristics – SBR
® – D1 @ T
A = 25ºC unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 5)
V(BR)R
35
40
⎯
V
IR = 1mA
Forward Voltage
VF
⎯
⎯
354
415
0.42
0.49
V
IF = 0.5A
IF = 1.0A
Reverse Current (Note 5)
IR
⎯
⎯
100
μA
VR = 20V
Notes:
5. Short duration pulse test used to minimize self-heating effect.
Q1, P-CHANNEL MOSFET
01
2
3
4
5
Fig. 1 Typical Output Characteristics
-V
, DRAIN-SOURCE VOLTAGE (V)
DS
0
2
4
6
8
10
V
= -1.5V
GS
V
= -2.0V
GS
V
= -2.5V
GS
V
= -4.5V
GS
V
= -8.0V
GS
V
= -1.0V
GS
V
= -1.2V
GS
0.5
1
1.5
2
0
2
4
6
8
10
Fig. 2 Typical Transfer Characteristics
-V
, GATE SOURCE VOLTAGE (V)
GS
V
= -5V
DS
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
T = 125°C
A



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