TRF1015

RF DOWNCONVERTER

SLWS021D– JUNE 1996 – REVISED JULY 1998

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POST OFFICE BOX 655303

Frequency (RF) Mixer, and

Voltage-Controlled Oscillator (VCO)

Frequency (IF) on a Single Chip

Cordless Telephones

Package

Oscillator

description

The Texas Instruments (TI

™) TRF1015 is a single-chip RF downconverter suitable for 900-MHz receiver

applications. It combines a low-noise amplifier (LNA), a buffered voltage-controlled oscillator (VCO), and an RF

mixer into a 20-pin SSOP package requiring very few external components.

Minimal power consumption can be further reduced by placing the required modules into operate mode and the

remaining modules into standby mode.

Three modes of operation are provided for both the LNA and the mixer: standby, low current, and improved

compression. The improved compression mode is suitable for applications that require full duplex capability.

The improved compression mode is suitable for maintaining receiver sensitivity in the presence of large

interfering signals and provides a low bit-error rate (BER) in digital modulation systems. The three modes of

operation are selectable in accordance with the presence of a high or low signal on PD1 and PD2, as shown

in Table 1.

Table 1. Mode Control

MODE

PD1

PD2

Standby

L

L

Low current

H

H

Improved compression

L

H

The LNA has a gain of 13 dB and a noise figure of 2.2 dB. LNA input and output characteristic impedances are

50

Ω. The single balanced RF mixer has a gain of 9 dB with a single-sideband (SSB) noise figure of 10 dB. The

VCO has a typical tuning range of 25 MHz using an external varactor and resonator. The VCO gain and tuning

range can be adjusted to meet the phase-locked loop (PLL) design requirement, with an external shunt and

feedback capacitors in series with the resonator. A buffered output of the VCO provides phase locking capability

and can be configured for single-ended or differential operation.

The TRF1015 is offered in the 20-pin SSOP (DB) package and is characterized for operation from – 40

°C

to 85

°C free-air temperature.

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.

Copyright

© 1998, Texas Instruments Incorporated

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PD1

PD2

AUX_LO–

AUX_LO+

OSC2

VCO_GND

OSC1

VCO_BYP

LNA_GND

MIX_OUT–

MIX_OUT+

MIX_IN

MIX_GND

LNA_GND

LNA_IN

LNA_OUT

LNA_GND

LNA_GND

DB PACKAGE

(TOP VIEW)

TI is a trademark of Texas Instruments Incorporated.