TPS1120, TPS1120Y

DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

SLVS080A – MARCH 1994 – REVISED AUGUST 1995

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POST OFFICE BOX 655303

MIL-STD-883C, Method 3015

description

The TPS1120 incorporates two independent

p-channel enhancement-mode MOSFETs that

have been optimized, by means of the Texas

Instruments LinBiCMOS

™ process, for 3-V or 5-V

the TPS1120 is the ideal high-side switch for low-voltage portable battery-management systems, where

maximizing battery life is a primary concern. Because portable equipment is potentially subject to electrostatic

discharge (ESD), the MOSFETs have built-in circuitry for 2-kV ESD protection. End equipment for the TPS1120

includes notebook computers, personal digital assistants (PDAs), cellular telephones, bar-code scanners, and

PCMCIA cards. For existing designs, the TPS1120D has a pinout common with other p-channel MOSFETs in

small-outline integrated circuit SOIC packages.

AVAILABLE OPTIONS

PACKAGED DEVICES†

CHIP FORM

TJ

SMALL OUTLINE

(D)

CHIP FORM

(Y)

–40

°C to 150°C

TPS1120D

TPS1120Y

† The D package is available taped and reeled. Add an R suffix to device

type (e.g., TPS1120DR). The chip form is tested at 25

°C.

Caution. This device contains circuits to protect its inputs and outputs against damage due to high static voltages or electrostatic

fields. These circuits have been qualified to protect this device against electrostatic discharges (ESD) of up to 2 kV according to

MIL-STD-883C, Method 3015; however, it is advised that precautions be taken to avoid application of any voltage higher than

maximum-rated voltages to these high-impedance circuits.

LinBiCMS is a trademark of Texas Instruments Incorporated.

Copyright

© 1995, Texas Instruments Incorporated

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.

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