ASM3P2811A/B

ASM3P2812A/B

April 2008

ASM3P2814A/B

rev 1.6

Low Power EMI Reduction IC

4 of 11

Notice: The information in this document is subject to change without notice.

Operating Conditions

Symbol

Parameter

Min

Max

Unit

VDD

Voltage on any pin with respect to GND

3.0

3.6

V

Operating temperature

-40

+85

°C

Load Capacitance

10

pF

Input Capacitance

7

pF

DC Electrical Characteristics

Symbol

Parameter

Min

Typ

Max

Unit

Input low voltage

VSS – 0.3

0.8

V

Input high voltage

2

V

Input low current

(Inputs D_C, SRS and FRS are pulled high internally)

-50

µA

Input high current

50

µA

XOUT Output low current

3

mA

XOUT Output high current

3

mA

0.4

V

2.5

V

Dynamic supply current (Unloaded Output)

8

18

mA

Static supply current , Standby mode

(CLKIN pulled to GND)

4.5

mA

VDD

Operating voltage

3.0

3.3

3.6

V

Power up time (first locked clock cycle after power up)

500

µS

Clock out impedance

76

Ω

AC Electrical Characteristics

Symbol

Parameter

Min

Typ

Max

Unit

Input frequency for ASM3P2811/12/13/14 A/B

10

40

MHz

Output frequency for ASM3P2811A/B

10

40

MHz

Output frequency for ASM3P2812A/B

20

80

MHz

Output frequency for ASM3P2814A/B

40

160

MHz

Output rise time (measured at 0.8V to 2.0V)

0.5

0.9

1.2

nS

Output fall time (measured at 2.0V to 0.8V)

0.8

1.0

1.3

nS

Cycle to Cycle Jitter (Unloaded Output)

±250

pS

Output duty cycle

45

50

55

%