BC636 BC638 BC640

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

ON CHARACTERISTICS(1)

DC Current Gain

(IC = –5.0 mAdc, VCE = –2.0 Vdc)

(IC = –150 mAdc, VCE = –2.0 Vdc)

BC636

BC638

BC640

(IC = –500 mA, VCE = –2.0 V)

hFE

25

40

40

40

25

—

—

—

—

—

—

250

160

160

—

—

Collector – Emitter Saturation Voltage

(IC = –500 mAdc, IB = –50 mAdc)

VCE(sat)

—

—

–0.25

–0.5

–0.5

—

Vdc

Base–Emitter On Voltage

(IC = –500 mAdc, VCE = –2.0 Vdc)

VBE(on)

—

—

–1.0

Vdc

DYNAMIC CHARACTERISTICS

Current – Gain — Bandwidth Product

(IC = –50 mAdc, VCE = –2.0 Vdc, f = 100 MHz)

fT

—

150

—

MHz

Output Capacitance

(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)

Cob

—

9.0

—

pF

Input Capacitance

(VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz)

Cib

—

110

—

pF

1. Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle 2.0%.