TLV225X datasheet(21/60 Pages) TI

21 / 60 page

TLV225x, TLV225xA

Advanced LinCMOS

 RAIL-TO-RAIL

VERY LOW-POWER OPERATIONAL AMPLIFIERS

SLOS185C – FEBRUARY 1997 – REVISED – MARCH 2001

POST OFFICE BOX 655303

• DALLAS, TEXAS 75265

TLV2254Q, and TLV2254M electrical characteristics at specified free-air temperature, VDD = 5 V

(unless otherwise noted) (continued)

PARAMETER

TEST CONDITIONS

TA†

TLV2254Q,

TLV2254M

TLV2254AQ,

TLV2254AM

UNIT

MIN

TYP

MAX

MIN

TYP

MAX

IDD

Supply current

VO =2 5V

No load

°C

140

250

140

250

µA

IDD

(four amplifiers)

VO = 2.5 V,

No load

Full range

300

µA

† Full range is – 40

°C to 125°C for Q level part, –55°C to 125°C for M level part.

TLV2254Q, and TLV2254M operating characteristics at specified free-air temperature, VDD = 5 V

PARAMETER

TEST CONDITIONS

TA†

TLV2254Q,

TLV2254M

TLV2254AQ,

TLV2254AM

UNIT

MIN

TYP

MAX

MIN

TYP

MAX

Slew rate at unity

VO =0 5Vto3 5V

RL 100 kΩ ‡

°C

0.07

0.12

0.07

0.12

Slew rate at unity

gain

VO = 0.5 V to 3.5 V,

CL = 100 pF ‡

RL = 100 kΩ ‡,

Full

005

µs

gain

CL = 100 F ‡

range

0.05

Equivalent input

f = 10 Hz

°C

nV/

√Hz

noise voltage

f = 1 kHz

°C

nV/

√Hz

VN(PP)

Peak-to-peak

equivalent input

f = 0.1 Hz to 1 Hz

°C

0.7

µV

VN(PP)

equivalent input

noise voltage

f = 0.1 Hz to 10 Hz

°C

1.1

µV

Equivalent input

noise current

°C

0.6

fA /

√Hz

THD+N

Total harmonic

distortion plus

VO = 0.5 V to 2.5 V,

f=20 kHz

AV = 1

°C

0.2%

THD + N

distortion plus

noise

f = 20 kHz,

RL = 50 kΩ ‡

AV = 10

°C

Gain-bandwidth

f = 50 kHz,

RL = 50 kΩ ‡,

°C

MHz

product

CL = 100 pF ‡

°C

0.2

MHz

BOM

Maximum output-

VO(PP) = 2 V,

AV = 1,

°C

kHz

BOM

swing bandwidth

O(PP)

RL = 50 kΩ ‡,

CL = 100 pF ‡

°C

kHz

φm

Phase margin at

unity gain

RL = 50 kΩ ‡,

CL = 100 pF ‡

°C

Gain margin

°C

† Full range is – 40

°C to 125°C for Q level part, –55°C to 125°C for M level part.

‡ Referenced to 2.5 V

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