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2SB772Q датащи(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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2SB772Q датащи(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
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2 / 2 page ![]() Any changing of specification will not be informed individual 2SB772Q PNP Silicon Medium Power Transistor http://www.SeCoSGmbH.com Elektronische Bauelemente Fig.1 Static characteristics -Collector-Emitter voltage(V) 04 8 1216 20 0 0.4 0.8 1.2 1.6 Tc,Case Temperature(°C) -IB=1mA -IB=2mA -IB=3mA -IB=4mA -IB=5mA -IB=6mA -IB=7mA -IB=8MA -IB=9mA Fig.2 Derating curve of safe operating areas 200 150 100 50 0 -50 0 50 100 150 S/b lim ite d Tc,Case Temperature(°C) 200 150 100 50 0 -50 Fig.3 Power Derating 0 4 8 12 Fig.4 Collector Output capacitance -Collector-Base Voltage(v) 10 0 10 -1 10 -2 10 -3 10 1 10 2 10 3 10 0 IE=0 f=1MHz Fig.5 Current gain- bandwidth product 10 1 10 2 10 3 10 0 VCE=5V Collector-Emitter Voltage Fig.6 Safe operating area Ic(max),DC Ic(max),Pulse 10m S 1m S Ic,Collector current(A) Fig.7 DC current gain -Ic,Collector current(mA) -Ic,Collector current(mA) Fig.8 Saturation Voltage 10 1 10 2 10 3 10 0 VCE=-2V VCE(sat) VBE(sat) 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 10 1 10 0 10 1 10 2 10 0 10 1 10 2 10 3 10 4 10 0 10 1 10 2 10 3 10 4 10 0 10 1 10 2 10 3 10 4 IB=8mA IB=8mA RATING AND CHARACTERISTIC CURVES 01-Jun-2002 Rev. A Page 2 of 2 |
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