1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

High Current Transistors

NPN Silicon

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector – Emitter Voltage

VCEO

80

Vdc

Collector – Base Voltage

VCBO

80

Vdc

Emitter – Base Voltage

VEBO

5.0

Vdc

Collector Current — Continuous

IC

0.5

Adc

Total Device Dissipation @ TA = 25°C

Derate above 25

°C

PD

625

5.0

mW

mW/

°C

Total Device Dissipation @ TC = 25°C

Derate above 25

°C

PD

1.5

12

Watt

mW/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

RqJA

200

°C/W

Thermal Resistance, Junction to Case

RqJC

83.3

°C/W

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector – Emitter Breakdown Voltage(1)

(IC = 10 mAdc, IB = 0)

V(BR)CEO

80

—

—

Vdc

Collector – Base Breakdown Voltage

(IC = 100 mAdc, IE = 0)

V(BR)CBO

80

—

—

Vdc

Emitter – Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

V(BR)EBO

5.0

—

—

Vdc

Collector Cutoff Current

(VCB = 60 Vdc, IE = 0)

ICBO

—

—

100

nAdc

ON CHARACTERISTICS*

DC Current Gain

(IC = 10 mAdc, VCE = 2.0 Vdc)

(IC = 100 mAdc, VCE = 2.0 Vdc)

BC489

BC489A

BC489B

(IC = 1.0 Adc, VCE = 5.0 Vdc)*

hFE

40

60

100

160

15

—

—

160

260

—

—

400

250

400

—

—

1. Pulse Test: Pulse Width = 300

ms, Duty Cycle 2%.

Order this document

by BC489/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

BC489,A,B

CASE 29–04, STYLE 17

TO–92 (TO–226AA)

1

2

3

COLLECTOR

1

2

BASE

3

EMITTER