MBR1025

Chips for Schottky Diodes

Chip Specification

General Description:

Schottky Diode chips with Mo-barrier for switch mode power

rectifiers with the following features:

* Guard-ring for stress protection

* Extremely low forward voltage

* 125 ℃

℃

℃

℃ operation junction temperature

* reverse avalanche behavior

Mechanical Data:

MBR1025passivated Silicon Chip

Dimension(mil):

108x128 mil

Thickness:

350 +- 20

µm

Metallization:

Top ( Anode ) :

Al (AlAg)*

Bottom ( Cathode) : TiNiAg

Forward Current (A):

10A

Reverse Voltage (V):

>27V

Type

Chip

VF(V)@25 C

VF(V)@25 C

size(mil)

at If =10A

at If =20A

at 25 C

MBR1025

108x128

<0,4V

<0,5V

0,6mA

* Avaible in both variants

expected value for recommended assembling with both side soldering

Typical device : PBYL1025, 19TQ015