GFC430 datasheet(1/1 Pages) GSG

номер детали	GFC430

подробное описание детали	N Channel Power MOSFET with low RDS(on)

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производитель	GSG [Gunter Seniconductor GmbH.]

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Gunter Semiconductor GmbH

GFC430

N Channel Power MOSFET with low RDS(on)

Chip Specification

General Description:

* Advanced Process Technology

* Dynamic dV/dt Rating

* 150℃

℃

℃ Operating Temperature

* Fast Switching

* Fully Avalanche Rated

* Low RDS(on)

Mechanical Data:

D15

Dimension

2.92mm x 4.45mm

Thickness:

400

µµµµm

Metallization:

Top :

:

Al

Backside :

CrNiAg / Au

Suggested Bonding Conditions:

Die Mounting:

Solder Perform

95/5 PbSn or 92.5./2.5/5 PbAgIn

Source Bonding Wire:

8 mil Al

Absolute Maximum Rating

@Ta=25℃

℃

Characteristics

Symbol

Limit

Unit

Test Conditions

Drain-to-Source Breakdown Voltage

V(BR)DSS

500

V

VGS=0V, ID=250

µΑ

Static Drain-to - Source On-resistance

RDS(ON)

1.5

Ω

VGS=10V, ID=3.0A

Continuous Drain current ( in target package)

ID@25℃

5A

VGS=10V

Continuous Drain current ( in target package)

ID@100℃

3.2

A

VGS=10V

Operation Junction

Tj

-55~150

℃

Storage Temperature

TSTR

-55~150

℃

Target Device: IRF830

TO-220AB

PD

74

W

@Tc=25℃

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GFC430 датащи(PDF) 1 Page - Gunter Seniconductor GmbH.

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Аналогичный номер детали - GFC430

Аналогичное описание - GFC430

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