CHINA

SEMICONDUCTOR

Spec. No.

CORPORATION

Rev.

(Ta=25 )

Symbol

Unit

Pd

mW

mA

mA

-

mA/

V

Topr

Tstg

Electro-optical Characteristics -

(Ta=25 )

Symbol

Min.

Typ.

Max.

Unit

Condition

-

1.8

2.5

V

Iv

-

9

-

mcd

q

-

660

-

nm

Od

-

643

-

nm

-

20

-

nm

JS

-

-

100

A

IV-m

-

-

2:1

(Ta=25 )

Symbol

Min.

Typ.

Max.

Unit

Condition

-

2.1

2.8

V

Iv

-

7

-

mcd

q

-

568

-

nm

Od

-

572

-

nm

-

30

-

nm

JS

-

-

100

A

IV-m

-

-

2:1

.

Page

3/5

Forward Voltage Per Segment

Luminous Intensity Per Segment

Peak Emission Wavelength

Dominant Wavelength

Spectrum Radiation Bandwidth

Reverse Current

Luminous Intensity Matching Ratio

Yellow Green

Super Bright Red

Yellow Green

Parameter

Forward Voltage Per Segment

Luminous Intensity Per Segment

Solder temperature 1/16 inch below seating plane for 3 seconds at 260

Parameter

5

Operating Temp.

-35 ~ +85

Storage Temp.

-35 ~ +85

70

25

90

Parameter

Power Dissipation Per Dice

Continuous Forward Current Per Dice

Peak Current Per Dice(duty cycle 1/10, 1kHz)

Peak Emission Wavelength

Dominant Wavelength

Spectrum Radiation Bandwidth

Reverse Current

PS-ND-08090405

0.33

Reverse Voltage Per Dice

Rating

A

Model No CSM-58261SG

http://www.csctw.com.tw

Luminous Intensity Matching Ratio

Derating Linear From 25

Per Dice