May 2009

Doc ID 15759 Rev 1

1/9

9

ST13003N

High voltage fast-switching NPN power transistor

Features

Applications

Description

The device is manufactured using high voltage

multi epitaxial planar technology for high switching

speeds and high voltage capability. It uses a

cellular emitter structure with planar edge

termination to enhance switching speeds while

maintaining the wide RBSOA.

Figure 1.

Internal schematic diagram

SOT-32

3

2

1

Table 1.

Device summary

Order code

Marking

Package

Packaging

ST13003N

13003N

SOT-32

BAG

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