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RFMA5065-1W датащи(PDF) 1 Page - Excelics Semiconductor, Inc. |
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RFMA5065-1W датащи(HTML) 1 Page - Excelics Semiconductor, Inc. |
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1 / 2 page ![]() RFMA5065-1W ISSUE DATE 08/29/06 5.0 – 6.5 GHz Power Amplifier MMIC Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 1 of 2 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised August 2006 Vg N/C RF IN RF OUT -1W-03 Vd RFMA5065 Excelics Vd FEATURES • 5.0– 6.5GHz Operating Frequency Range • 30dBm Output Power at 1dB Compression • 37.0 dB Typical Power Gain @1dB Gain Compression • -38dBc Maximum OIM3 @ Each Tone Pout 18.5dBm APPLICATIONS • Point-to-Point And Point-to-Multipoint Radio • Military Radar Systems Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Tb = 25 °C, 50 ohm, Vdd=7V, Vgg=-5V) SYMBOL PARAMETER/TEST CONDITIONS MIN TYP MAX UNITS F Operating Frequency Range 5.0 6.5 GHz P1dB Output Power at 1dB Gain Compression 28.5 30 dBm G1dB Gain @1dB gain compression 31.0 37.0 dB OIMD3 Output 3 rd Order Intermodulation Distortion @∆f=10MHz, Each Tone Pout 18.5dBm -41 -38 dBc Input RL Input Return Loss -12 -6 dB Output RL Output Return Loss -6 dB Idd Drain Current @small signal output power level 950 1100 mA Vdd Drain Supply Voltage 7 V Vgg Gate Supply Voltage -5 V Rth Thermal Resistance 7 oC/W Tb Operating Base Plate Temperature - 30 + 80 ºC MAXIMUM RATINGS @25°C1,2 SYMBOL CHARACTERISTIC ABSOLUTE CONTINUOUS 1,2 VDD Drain Supply Voltage 10V 8V VGG Gate Supply Voltage -8V -3 V IDQ Quiescent Drain Current Idss 1.1A IGG Gate Current 60mA 30 mA PIN Input Power 20dBm @ 3dB compression TCH Channel Temperature 175°C 150°C TSTG Storage Temperature -65/175°C -65/150°C PT Total Power Dissipation 15W 12.6W Notes: 1. Operating the device beyond any of the above rating may reduce MTTF and cause permanent damage. 2. Bias conditions must also satisfy the following equation Vdd*Idd < (TCH –Tb)/RTH |
Аналогичный номер детали - RFMA5065-1W |
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Аналогичное описание - RFMA5065-1W |
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