EPB018B5/B7/B9-70

ISSUED 11/01/2007

Super Low Noise High Gain Heterojunction FET

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085

page 1 of 3

Revised November 2007

FEATURES

•

NON-HERMETIC LOW COST CERAMIC 70 mil

PACKAGE

•

TYPICAL 0.50~0.90dB NOISE FIGURE AND

11.5~13.0dB ASSOCIATED GAIN AT 12GHz

•

0.3 X 180 MICRON RECESSED “ MUSHROOM”

GATE

•

•

ADVANCED EPITAXIAL HETEROJUNCTION

PROFILE PROVIDES SUPER LOW NOISE, HIGH

GAIN AND HIGH RELIABILITY

Caution! ESD sensitive device.

SYMBOL

PARAMETERS/TEST CONDITIONS

MIN

TYP

MAX

UNITS

NF

Noise Figure, f = 12GHz

EPB018B5-70

EPB018B7-70

EPB018B9-70

0.50

0.65

0.95

0.60

0.80

1.20

dB

Ga

Associated Gain, f = 12GHz

EPB018B5-70

EPB018B7-70

EPB018B9-70

11.5

11.0

10.5

13.0

12.5

11.5

dB

15.0

Output Power at 1dB Compression

f = 12GHz

f = 18GHz

15.0

dBm

Gain at 1dB Compression

f = 12GHz

f = 18GHz

14.0

11.5

dB

Saturated Drain Current

15

45

80

mA

Transconductance

50

90

mS

Pinch-off Voltage

-0.8

-2.5

V

Drain Breakdown Voltage

-3

-6

V

Source Breakdown Voltage

-3

-6

V

Thermal Resistance

480*

Notes: * Overall Rth depends on case mounting.

MAXIMUM RATINGS AT 25°C

SYMBOLS

PARAMETERS

ABSOLUTE

1

CONTINUOUS

2

Vds

Drain-Source Voltage

5V

4V

Vgs

Gate-Source Voltage

-3V

-2V

Ids

Drain Current

Idss

60mA

Igsf

Forward Gate Current

2mA

0.3mA

Pin

Input Power

12dBm

@1dB Compression

Tch

Channel Temperature

175

150

Tstg

Storage Temperature

-65/175

-65/150

Pt

Total Power Dissipation

285mW

240mW

Notes: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.