EPA480B/EPA480BV

UPDATED: 09/27/2007

High Efficiency Heterojunction Power FET

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085

Page 1 of 2

September 2007

•

+35.5dBm TYPICAL OUTPUT POWER

•

7.5dB TYPICAL POWER GAIN FOR EPA480B AND

9.0dB FOR EPA480BV AT 12GHz

•

0.3X 4800 MICRON RECESSED “MUSHROOM” GATE

•

•

ADVANCED EPITAXIAL DOPING PROFILE

PROVIDES HIGH POWER EFFICIENCY,

LINEARITY AND RELIABILITY

•

EPA480BV WITH VIA HOLE SOURCE GROUNDING

•

Idss SORTED IN 120mA PER BIN RANGE

Chip Thickness: 45

± 13 microns

All Dimensions In Microns

No Via Hole For EPA480B

EPA480B

EPA480BV

UNIT

SYMBOLS

PARAMETERS/TEST CONDITIONS

MIN

TYP

MAX

MIN

TYP

MAX

34.0

35.5

34.0

35.5

Output Power at 1dB Compression f=12GHz

Vds=8V, Ids=50% Idss

f=18GHz

35.5

dBm

Gain at 1dB Compression

f=12GHz

Vds=8V, Ids=50% Idss

6.0

7.5

7.5

9.0

dB

PAE

Gain at 1dB Compression

Vds=8V, Ids=50% Idss

f=12GHz

40

45

%

Idss

Saturated Drain Current

Vds=3V, Vgs=0V

880

1440

1880

880

1440

1880

mA

Gm

Transconductance

Vds=3V, Vgs=0V

960

1520

960

1520

mS

Vp

Pinch-off Voltage

Vds=3V, Ids=14mA

-1.0

-2.5

-1.0

-2.5

V

BVgd

Drain Breakdown Voltage

Igd=4.8mA

-13

-15

-13

-15

V

BVgs

Source Breakdown Voltage

Igs=4.8mA

-7

-14

-7

-14

V

Rth

Thermal Resistance (Au-Sn Eutectic Attach)

10

8

MAXIMUM RATINGS AT 25

EPA480B

EPA480BV

SYMBOLS

PARAMETERS

ABSOLUTE

1

CONTINUOUS

2

ABSOLUTE

1

CONTINUOUS

2

Vds

Drain-Source Voltage

12V

8V

12V

8V

Vgs

Gate-Source Voltage

-8V

-3V

-8V

-3V

Ids

Drain Current

Idss

1.4A

Idss

1.75A

Igsf

Forward Gate Current

240mA

40mA

240mA

40mA

Pin

Input Power

33dBm

@ 3dB Compression

33dBm

@ 3dB Compression

Tch

Channel Temperature

175

150

175

150

stg

Storage Temperature

-65/175

-65/150

-65/175

-65/150

Pt

Total Power Dissipation

14W

11W

17W

14W

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.