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Dated : 07/02/2003
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
ST LL60P
SILICON SCHOTTKY BARRIER DIODE
Characteristics equivalent to or better than 1N60P
ideal for used in detection or for switching on the
radio, TV, etc.
Absolute Maximum Ratings (Ta = 25
oC)
Symbol
Value
Unit
Reverse Voltage dc
VR
20
V
Peak Reverse Voltage
VRM
45
V
Average Rectified Output Current
IO
50
mA
Peak Forward Current
IFM
150
mA
Surge Forward Current
Isurge
500
mA
Junction Temperature
Tj
75
OC
Storage Temperature Range
TS
-55 to +175
OC
Characteristics at Ta = 25
oC
Symbol
Min.
Typ.
Max.
Unit
Forward Current
at VF = 1V
IF
4
-
-
mA
Reverse Currents
at VR = 10V
IR
-
-
50
μA
Junction Capacitance C
at f = 1MHz, V = 1V
-
-
-
1
pF
Rectification Efficiency
at Vi = 2Vrms, = 5KΩ
η
55
-
-
%
Output
Input 2Vrms
Rectification Efficiency Measurement Circuit
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