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Dated : 20/06/2007
®
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
1SS83
SILICON EPITAXIAL PLANAR DIODE
High Voltage Switching Diode
Features
• High reverse voltage (VR = 250 V)
• High reliability with glass seal
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Peak Reverse Voltage
VRM
300
V
Reverse Voltage
VR
250
V
Average Forward Current
IO
200
mA
Peak Forward Current
IFM
625
mA
Non-Repetitive Peak Forward Surge Current (at t = 1 s)
IFSM
1
A
Power Dissipation
Ptot
400
mW
Junction Temperature
TJ
175
O
C
Storage Temperature Range
Tstg
- 65 to + 175
O
C
Electrical Characteristics at Ta = 25 OC
Parameter
Symbol
Typ.
Max.
Unit
Forward Voltage
at IF = 100 mA
VF
-
1
V
Reverse Current
at VR = 250 V
at VR = 300 V
IR
-
-
0.2
100
µA
Total Capacitance
at VR = 0 V, f = 1 MHz
CT
1.5
-
pF
Reverse Recovery Time
at IF = IR = 30 mA, Irr = 3 mA, RL = 100 Ω
trr
-
100
ns
Max. 3.9
Max. 1.9
Glass Case DO-35
Max. 0.5
Min. 27.5
Min. 27.5
XXX
Cathode Band
Part No.
ST
"ST" Brand
Dimensions in mm
Black
Black
Black
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