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Dated : 23/06/2003
SEMTECH ELECTRONICS LTD.
(Subsidiary of Semtech International Holdings Limited, acompany
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
RN2Z
SILICON RECTIFIER DIODE
Forward Current – 2.0 Ampere
Features
• For pulse rectification applications
Mechanical Data
• Case: Resin molded
Absolute Maximum Ratings and Characteristics
Symbols
Rating
Units
Transient Peak Reverse Voltage
VRSM
200
V
Peak Reverse Voltage
VRM
200
V
Average Forward Current
at TC = 125
OC
IF(AV)
2
A
Peak Surge Forward Current
10mS Single Half Sine
IFSM
70
A
Junction Temperature
Tj
-40 to +150
OC
Storage Temperature Range
TS
-40 to +150
OC
Characteristics ( Ta=25
oC,unless otherwise specified )
Symbol
Value(max.)
Unit
Forward Voltage Drop
at IF=2A
VF
0.92
V
Reverse Leakage Current
at VR=VRM
IR
50
µA
Reverse Leakage Current Under High Temperature
at VR=VRM,, Tj=150
oC
HIR
4
mA
Reverse Recovery Time, Recovery point 90%
at IF=IRP=100mA
Trr-1
100
nS
Reverse Recovery Time, Recovery point 75%
at IF=100Ma,IRP=200mA
Trr-2
50
nS
Thermal Resistance
Between Junction and Lead
θj-1
12
OC/W
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