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Dated : 07/04/2009
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
1SS352
SILICON EPITAXIAL PLANAR DIODE
Features
• Low forward voltage
• Fast Reverse Recovery Time
• Small Total Capacitance
Application
• Ultra high speed switching
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Maximum (Peak) Reverse Voltage
VRM
85
V
Reverse Voltage
VR
80
V
Average Forward Current
IO
100
mA
Maximum (Peak) Forward Current
IFM
200
mA
Surge Forward Current (10 ms)
IFSM
1
A
Power Dissipation
Ptot
200
mW
Junction Temperature
Tj
125
O
C
Storage Temperature Range
Tstg
- 55 to + 125
O
C
Characteristics at Ta = 25 OC
Parameter
Symbol
Max.
Unit
Forward Voltage
at IF = 100 mA
VF
1.2
V
Reverse Current
at VR = 30 V
at VR = 80 V
IR
0.1
0.5
µA
Total Capacitance
at f = 1 MHz
CT
3
pF
Reverse Recovery Time
at IF = 10 mA
trr
4
ns
Anode
2
Top View
Marking Code: "W2"
Simplified outline SOD-323 and symbol
1
2
PINNING
1
PIN
Cathode
DESCRIPTION
W2
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