Dated : 27/03/2009
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
ST 2SC1008
NPN Silicon Epitaxial Planar Transistor
for medium speed switching and low frequency
amplifier applications.
The transistor is subdivided into three groups, R,
O, Y,and G according to its DC current gain.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector Base Voltage
VCBO
80
V
Collector Emitter Voltage
VCEO
60
V
Emitter Base Voltage
VEBO
8
V
Collector Current
IC
700
mA
Collector Power Dissipation
Ptot
800
mW
Junction Temperature
Tj
150
O
C
Storage Temperature Range
Tstg
- 55 to + 150
O
C
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at VCE = 2 V, IC = 50 mA
Current Gain Group
R
O
Y
G
hFE
hFE
hFE
hFE
40
70
120
200
-
-
-
-
80
140
240
400
-
-
-
-
Collector Base Cutoff Current
at VCB = 60 V
ICBO
-
-
0.1
µA
Emitter Base Cutoff Current
at VEB = 5 V
IEBO
-
-
0.1
µA
Collector Base Breakdown Voltage
at IC = 100 µA
V(BR)CBO
80
-
-
V
Collector Emitter Breakdown Voltage
at IC = 10 mA
V(BR)CEO
60
-
-
V
Emitter Base Breakdown Voltage
at IE = 10 µA
V(BR)EBO
8
-
-
V
Collector Emitter Saturation Voltage
at IC = 500 mA, IB = 50 mA
VCEsat
-
-
0.4
V
Base Emitter Saturation Voltage
at IC = 500 mA, IB = 50 mA
VBEsat
-
-
1.1
V
Gain Bandwidth Product
at VCE = 10 V, IC = 50 mA
fT
30
-
-
MHz
Output Capacitance
at VCB = 10 V, IE = 0, f = 1 MHz
Cob
-
8
-
pF
1. Emitter 2. Base 3. Collector
TO-92 Plastic Package
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