Dated : 02/08/2006
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
BAS16W
Silicon Epitaxial Planar Small Signal Diode
High Speed Switching Diode
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Repetitive Peak Reverse Voltage
VRRM
85
V
Continuous Reverse Voltage
VR
75
V
Continuous Forward Current (at TS = 90 OC)
IF
155
mA
Repetitive Peak Forward Current
IFRM
500
mA
Non-repetitive Peak Forward Current
at Square Wave; Tj = 25 OC Prior to Surge t = 1 µs
t = 1 ms
t = 1 s
IFSM
4
1
0.5
A
Total Power Dissipation (at TS = 90 OC)
Ptot
170
mW
Thermal Resistance from Junction to Soldering Point
Rth j-S
350
K/W
Junction Temperature
Tj
150
O
C
Storage Temperature Range
Tstg
- 65 to + 150
O
C
Characteristics at Ta = 25
OC
Parameter
Symbol
Max.
Unit
Forward Voltage
at IF = 1 mA
at IF = 10 mA
at IF = 50 mA
at IF = 150 mA
VF
VF
VF
VF
715
855
1000
1250
mV
mV
mV
mV
Reverse Current
at VR = 25 V
at VR = 75 V
at VR = 25 V, TJ = 150 OC
at VR = 75 V, TJ = 150 OC
IR
IR
IR
IR
30
1
30
50
nA
µA
µA
µA
Diode Capacitance
at f = 1 MHz
CD
1.5
pF
Reverse Recovery Time
when switched from IF = 10 mA to IR = 10 mA,
RL = 100 Ω; measured at IR = 1 mA
trr
4
ns
Forward Recovery Voltage
when switched from IF = 10 mA, tr = 20 ns
Vfr
1.75
V
Marking Code: A6
1
3
2
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