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Dated : 02/12/2005
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
ST 2SC1359
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into one group,
according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector Base Voltage
VCBO
30
V
Collector Emitter Voltage
VCEO
20
V
Emitter Base Voltage
VEBO
5
V
Collector Current
IC
100
mA
Power Dissipation
Ptot
250
mW
Junction Temperature
Tj
150
O
C
Storage Temperature Range
TS
-55 to +150
O
C
Characteristics at Tamb = 25 OC
Parameter
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at VCE=6V, IC=1mA
hFE
150
-
650
-
Collector Base Breakdown Voltage
at IC=100µA
V(BR)CBO
30
-
-
V
Collector Emitter Breakdown Voltage
at IC=10mA
V(BR)CEO
20
-
-
V
Emitter Base Breakdown Voltage
at IE=10µA
V(BR)EBO
5
-
-
V
Collector Cutoff Current
at VCB=30V
ICBO
-
-
0.1
µA
Emitter Cutoff Current
at VEB=3V
IEBO
-
-
0.1
µA
Collector Saturation Voltage
at IC=100mA, IB=10mA
VCE(sat)
-
-
0.3
V
Gain Bandwidth Product
at VCE=6V, IC=10mA
fT
-
125
-
MHz
Output Capacitance
at VCB=6V, f=1MHz
COB
-
1.8
-
pF
Noise Figure
at VCE=6V, IE=0.5mA, f=1KHz, RS=500Ωat
NF
-
4
-
dB
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