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Dated : 04/12/2007
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
1SS392
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
For low voltage high speed switching application
Features
• Low forward voltage
• Low reverse current
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Maximum Peak Reverse Voltage
VRM
45
V
Reverse Voltage
VR
40
V
Average Forward Current
IO
100
mA
Maximum Peak Forward Current
IFM
300
mA
Non-Repetitive Peak Forward Surge Current ( t = 10 ms)
IFSM
1
A
Power Dissipation
Pd
150
mW
Junction Temperature
Tj
125
O
C
Storage Temperature Range
Tstg
- 55 to + 125
O
C
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Max.
Unit
Forward Voltage
at IF = 100 mA
VF
-
0.6
V
Reverse Current
at VR = 40 V
IR
-
5
µA
Reverse Breakdown Voltage
at IR = 10 µA
V(BR)R
45
-
V
Total Capacitance
at VR = 0 , f = 1 MHz
CT
-
25
pF
Marking Code: "ZD"
SOT-23 Plastic Package
1
3
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