STT3434 datasheet(2/4 Pages) SECOS

2 / 4 page

Elektronische Bauelemente

STT3434

6.1 A, 30 V, RDS(ON) 34 m

N-Channel Enhancement Mode Power Mos.FET

01-June-2005 Rev. A

Page 2 of 4

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

BVDSS

VGS = 0, ID = 250uA

Gate Threshold Voltage

VGS(th)

0.6

VDS = VGS, ID = 1mA

Forward Transconductance

gfs

VDS = 10V, ID = 6.1A

Gate Leakage Current

IGSS

±100

VGS = ±12 V

Zero Gate Voltage Drain Current (Tj=25 )

℃

VDS = 30 V, VGS = 0 V

Zero Gate Voltage Drain Current (Tj=75 )

℃

IDSS

VDS = 24 V, VGS = 0 V

VGS = 4.5 V, ID = 6.1 A

Drain-Source On-Resistance

RDS(ON)

mΩ

VGS = 2.5 V, ID = 2.0 A

Total Gate Charge

Gate-Source Charge

Qgs

1.9

Gate-Drain Charge

Qgd

2.6

ID = 6.1 A

VDS = 15 V

VGS = 4.5 V

Td(on)

Turn-on Delay Time

Rise Time

Td(off)

Turn-off Delay Time

Fall Time

VDS = 15 V

ID = 1 A

VGS = 4.5 V

RG = 6 Ω

RL = 15 Ω

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Forward On Voltage

VSD

1.2

IS = 1.7 A, VGS = 0 V

Reverse Recovery Time

Trr

IS = 1.7 A, dl/dt = 100A/us

Notes:

1. Pulse width limited by Max. junction temperature.

2. Pulse width300us, duty cycle ≦ 2%.

3. Surface mounted on 1 in

2 copper pad of FR4 board, t ≦ 5 sec; 180°C/W when mounted on Min. copper pad.

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