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SSM9915 датащи(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

номер детали SSM9915
подробное описание детали  N-Channel Enhancement Mode Power Mos.FET
PDF  4 Pages
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производитель  SECOS [SeCoS Halbleitertechnologie GmbH]
домашняя страница  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SSM9915 датащи(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

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Source-Drain Diode
01-Jun-2002 Rev. A
Page 2 of 4
Elektronische Bauelemente
Notes: 1.
2.Pulse width 300us, dutycycle 2%.
≦
≦
3.
Surface mounted on 1 in copper pad of FR4 board.
2
Pulse width limited by safe operating area.
SSM9915
6.2A, 20V,RDS(ON) 50m
N-Channel Enhancement Mode Power Mos.FET
Ω
t 10sec.
≦
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Forward On Voltage
Reverse Recovery Time
Trr
_
Reverse Recovery Change
_
Qrr
nC
nS
17
9
2.5
3
=10A, VGS=0V.
VSD
_
_
IS=
A, VGS=0V.
V
1.
2
_
_
IS
dl/dt=100A/us
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
Electrical Characteristics( Tj=25 C Unless otherwise specified)
o
50
_
_
13
S
VDS=10V, ID=5A
_
_
Crss
Reverse Transfer Capacitance
Forward Transconductance
Gfs
0.78
_
_
Gate Resistance
Rg
f=1.0MHz
5
1
2
8
55
10
3
70
nC
nS
pF
VGS=0V
VDS=20V
f=1.0MHz
VDD=10V
ID=10A
VGS=5 V
RG=3.3
RD=1
Ω
Ω
ID=10A
VDS=16V
VGS= 4.5V
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
20
0.03
0.5
1.2
100
1
25
50
80
±
V
V/
Reference to 25C, ID=1m
o
oC
V
nA
uA
uA
mΩ
VGS=4.5V, ID=6A
VGS=2.5V, ID=4A
VGS=0V, ID=250uA
VGS=
V
±
12
VDS=20V,VGS=0
VDS=16V,VGS=0
VDS=VGS, ID=250uA
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
360
8
580
A
Total Gate Charge
Qg
Qgs
Qgd
Td(ON)
Td(Off)
Tr
Ciss
Coss
Tf
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
BVDSS
BVDS/ Tj
IDSS
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 )
Static Drain-Source On-Resistance
Drain-Source Leakage Current(Tj=70 C)
VGS(th)
IGSS
oC
o
2
2
RDS(ON)
2
2
Ω



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