поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

Preview PDF HTML

SSG4957 датащи(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

номер детали SSG4957
подробное описание детали  P-Channel Enhancement Mode Power Mos.FET
PDF  4 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  SECOS [SeCoS Halbleitertechnologie GmbH]
домашняя страница  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SSG4957 датащи(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

  SSG4957 Datasheet HTML 1Page - SeCoS Halbleitertechnologie GmbH SSG4957 Datasheet HTML 2Page - SeCoS Halbleitertechnologie GmbH SSG4957 Datasheet HTML 3Page - SeCoS Halbleitertechnologie GmbH SSG4957 Datasheet HTML 4Page - SeCoS Halbleitertechnologie GmbH  
Zoom Inzoom in Zoom Outzoom out
 2 / 4 page
background image
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
2 of 4
Source-Drain Diode
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Forward On Voltage
VDS
_
_
IS=1.7A, VGS=0V.
V
-1.2
Notes: 1.Pulse width limited by safe operating area.
2.Pulse width 300us, dutycycle 2%.
≦
≦
Reverse Recovery Time
Reverse Recovery Charge
Is=-7A, V GS=0V
_
_
_
_
Trr
Qrr
A
A
35
34
dl/dt=100A/uS
3.Surface mounted on 1 in copper pad of FR4 board; 135OC/W when mounted on min. copper pad.
2
2
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Crss
Qg
Qgs
Qgd
Td(ON)
Td(Off)
Tr
Ciss
Coss
Tf
27
5
18
nC
nS
pF
VGS=0V
VDS=-25V
f=1.0MHz
VDD=-15V
ID=-1A
VGS=-10V
RG=3.3
RD=15
Ω
Ω
ID=-7A
VDS=-24V
VGS=-4.5V
_
_
__
_
_
_
_
_
_
_
_
_
_
Forward Transconductance
Gfs
S
12
VDS=-10V, ID=-7A
_
_
45
C
o
C
o
C
o
2
2
2
14
11
38
25
1670
530
435
__
_
_
2670
_
_
_
_
Reference to 25 ,ID=-1mA
o
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Total Gate Charge
RDS(ON)
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 )
Static Drain-Source On-Resistance
Drain-Source Leakage Current (Tj=70 )
BVDSS
BVDS/ Tj
VGS(th)
IGSS
IDSS
-30
-0.02
-1.0
-
3.0
100
-1
-25
24
36
±
V
V/
V
nA
uA
uA
mΩ
VGS=-10V, ID=-7A
VGS=-4.5V, ID=-5A
VGS=0V, ID=-250uA
VGS= 20V
±
VDS=-30V,VGS=0
VDS=-24V,VGS=0
VDS=VGS, ID=-250uA
_
_
_
_
_
_
_
30
_
20
_
_
_
_
_
C
o
C
o
Tj=25
Elektronische Bauelemente
SSG4957
-7.7A, -30V,RDS(ON) 24m
P-Channel Enhancement Mode Power Mos.FET
Ω



Html Pages

1 2 3 4


датащи скачать

Go To PDF Page


ссылки URL



Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   Ссылка на техническое описание    |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com