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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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SSG4913 датащи(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SSG4913 датащи(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 4 page  Elektronische Bauelemente SSG4913 P-Ch Enhancement Mode Power MOSFET -3.5 A, -20 V, RDS(ON) 130 mΩ 01-December-2008 Rev. A Page 1 of 4 SOP-8 A H B M D C J K F L E N G 4913SS 1 S1 G1 S2 G2 D1 D1 D2 D2 = Date Code RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTIONS & FEATURES The SSG4913 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Simple Drive Requirement Lower On-resistance Fast Switching Performance PACKAGE INFORMATION Weight: 0.07936g MARKING CODE ABSOLUTE MAXIMUM RATINGS Parameter Symbol Ratings Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8 V Continuous Drain Current 3 ID @TA=25℃ -3.5 A Continuous Drain Current 3 ID @TA=70℃ -2.8 A Pulsed Drain Current 1,2 IDM -18 A Total Power Dissipation PD @TA=25℃ 2 W Operating Junction and Storage Temperature Range TJ, TSTG -55 ~ +150 ℃ Linear Derating Factor 0.02 W/℃ THERMAL DATA Parameter Symbol Value Unit Thermal Resistance Junction-ambient 3 Max RθJ-AMB 62.5 ℃ /W Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 5.80 6.20 H 0.35 0.49 B 4.80 5.00 J 0.375 REF. C 3.80 4.00 K 45° D 0° 8° L 1.35 1.75 E 0.40 0.90 M 0.10 0.25 F 0.19 0.25 N 0.25 REF. G 1.27 TYP. 2 Gate1 1 Source1 Drain1 78 4 Gate2 3 Source2 Drain2 56 |
Аналогичный номер детали - SSG4913 |
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Аналогичное описание - SSG4913 |
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