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SSG4501 датащи(PDF) 8 Page - SeCoS Halbleitertechnologie GmbH |
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SSG4501 датащи(HTML) 8 Page - SeCoS Halbleitertechnologie GmbH |
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8 / 9 page ![]() http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 8 of 9 tage does not sag below the minimum dropout voltage during the load V higher than Vout in order for the device to Description GND Typically a large storage capacitor is connected from this pin to ground to insure that the input 1.3V or open= output enable. NC P-Channel Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Forward Characteristics of Reverse Diode Fig 12. Gate Threshold Voltage v.s. Junction Temperature Elektronische Bauelemente SSG 4501 N Channel 7A, 30V,RDS(ON) 28m Enhancement Mode Power Mos.FET P Channel -5.3A, -30V,RDS(ON) 5 0m Ω Ω |
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