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Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 4

Description

The SSD408 uses advanced trench technology to provide

Features

* Fast Switching Characteristic

excellent on-resistance and low gate charge.

TO-252

S

D

G

Elektronische Bauelemente

SSD408

N-Channel Enhancement Mode Power Mos.FET

Ω

Millimeter

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

6.40

6.80

G

0.50

0.70

B

5.20

5.50

H

2.20

2.40

C

6.80

7.20

J

0.45

0.55

D

2.20

2.80

K

0

0.15

E

2.30 REF.

L

0.90

1.50

F

0.70

0.90

M

5.40

5.80

S

0.60

0.90

R

0.80

1.20

The TO-252 package is universally preferred for all commercial-industrial

surface mount applications and suited for use as a load switch or in

PWM applications.

RoHS Compliant Product

Absolute Maximum Ratings

Parameter

Symbol

Ratings

Unit

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

18

A

14

A

70

A

Total Power Dissipation

60

W

Linear Derating Factor

0.4

W/ :

60

mJ

Single Pulse Avalanche Current

35

A

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +175

:

Thermal Data

Parameter

Symbol

Value

Unit

Thermal Resistance Junction-case

Max.

Rthj-c

2.5

: /W

Thermal Resistance Junction-ambient

Max.

Rthj-a

50

/

: W