поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

Preview PDF HTML

SSD40N03 датащи(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

номер детали SSD40N03
подробное описание детали  N-Channel Enhancement Mode Power Mos.FET
PDF  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  SECOS [SeCoS Halbleitertechnologie GmbH]
домашняя страница  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SSD40N03 датащи(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

  SSD40N03 Datasheet HTML 1Page - SeCoS Halbleitertechnologie GmbH SSD40N03 Datasheet HTML 2Page - SeCoS Halbleitertechnologie GmbH SSD40N03 Datasheet HTML 3Page - SeCoS Halbleitertechnologie GmbH SSD40N03 Datasheet HTML 4Page - SeCoS Halbleitertechnologie GmbH SSD40N03 Datasheet HTML 5Page - SeCoS Halbleitertechnologie GmbH  
Zoom Inzoom in Zoom Outzoom out
 2 / 5 page
background image
Electrical Characteristics( Tj=25 C Unless otherwise specified)
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
o
01-Jun-2002 Rev. A
Page 2 of 5
Notes:
2.
Pulse width limited by safe operating area.
Pulse width 300us, dutycycle 2%.
≦
≦
1.
Total Gate Charge
Crss
Qg
Qgs
Qgd
Td(ON)
Td(Off)
Tr
Ciss
Coss
Tf
17
3
10
7.2
60
22.5
10
800
380
133
nC
nS
pF
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V
VDS=25V
f=1.0MHz
VDD=15V
ID=18A
VGS=10V
RG=3.3
RD=0.83
Ω
Ω
ID=18A
VDS=24V
VGS= 5V
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
IDSS
25
250
21
30
uA
uA
m
26
Drain-Source Leakage Current (Tj=25 )
Static Drain-Source On-Resistance
Drain-Source Leakage Current(Tj=150 )
Ω
VGS=10V, ID=18A
VGS=4.5V, ID=14A
VDS=30V,VGS=0
VDS=24V,VGS=0
_
_
_
_
_
_
Forward Transconductance
Gfs
S
VDS=10V, ID=18A
_
_
oC
oC
2
2
RDS(ON)
18
24
BVDSS
BVDS/ Tj
30
0.037
1.0
3.0
100
±
V
V/
Reference to 25C, ID=1mA
o
oC
V
nA
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
VGS(th)
IGSS
VGS=0V, ID=250uA
VGS= 20V
±
VDS=VGS, ID=250uA
_
_
_
_
_
_
_
Source-Drain Diode
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Forward On Voltage
Continuous Source Current(Body Diode)
IS
_
Pulsed Source Current(Body Diode)
_
ISM
A
A
VD=VG=0V,VS=1.3 V
36
150
36
VSD
_
_
IS=
A, VGS=0V.Tj=25C
V
1.3
o
2
1
_
_
Elektronische Bauelemente
SSD40N03
36A, 30V,RDS(ON)21m
N-Channel Enhancement Mode Power Mos.FET
Ω



Html Pages

1 2 3 4 5


датащи скачать

Go To PDF Page


ссылки URL



Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   Ссылка на техническое описание    |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com