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Dated : 01/09/2006
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
BA592WS
SILICON RF SWITCHING DIODE
Features
• Very low forward resistance
• Small capacitance
Applications
• For band switching in TV/VTR
tuners and mobile applications
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Diode Reverse Voltage
VR
35
V
Forward Current
IF
100
mA
Junction Temperature
TJ
150
O
C
Operating Temperature Range
Top
- 55 to + 125
O
C
Storage Temperature Range
Tstg
- 55 to + 150
O
C
Electrical Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Typ.
Max.
Unit
Reverse Current
at VR = 20 V
IR
-
-
20
nA
Forward Voltage
at IF = 100 mA
VF
-
-
1
V
Diode Capacitance
at VR = 1 V, f = 1 MHz
at VR = 3 V, f = 1 MHz
CT
0.65
0.6
-
-
1.4
1.1
pF
Reverse Parallel Resistance
at VR = 0 V, f = 100 MHz
RP
-
100
-
KΩ
Forward Resistance
at IF = 3 mA, f = 100 MHz
at IF = 10 mA, f = 100 MHz
rf
-
-
-
-
0.7
0.5
Ω
Series Inductance
Ls
-
1.8
-
nH
Anode
2
Top View
Marking Code: "W4"
Simplified outline SOD-323 and symbol
1
W4
2
PINNING
1
PIN
Cathode
DESCRIPTION
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