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MAC97 датащи(PDF) 2 Page - SEMTECH ELECTRONICS LTD.

номер детали MAC97
подробное описание детали  Silicon Bidirectional Triode Thyristors
PDF  2 Pages
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производитель  SEMTECH_ELEC [SEMTECH ELECTRONICS LTD.]
домашняя страница  http://www.semtech.net.cn
Logo SEMTECH_ELEC - SEMTECH ELECTRONICS LTD.

MAC97 датащи(HTML) 2 Page - SEMTECH ELECTRONICS LTD.

  MAC97 Datasheet HTML 1Page - SEMTECH ELECTRONICS LTD. MAC97 Datasheet HTML 2Page - SEMTECH ELECTRONICS LTD.  
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Dated : 03/03/2006
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
MAC97…
Characteristics
(TC = 25 OC, and Either Polarity of MT2 to MT1 Voltage unless otherwise noted)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Peak Bloking Current
1) V
D = Rated VDRM, TJ = 110
O
C, Gate Open
IRRM
0.1
mA
Peak On-State Voltage (Either Direction)
(ITM = 1.1 A Peak; Pulse Width ≤ 2 ms, Duty Cycle ≤ 2 %)
VTM
1.65
V
Gate Trigger Current (Continuous dc)
(VD = 12 V, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
MT2(-), G(+)
MAC97
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
MT2(-), G(+)
MAC97A
IGT
10
10
10
10
5
5
5
7
mA
Gate Trigger Voltage (Continuous dc)
(VD = 12 V, RL = 100 Ohms)
MT2(+), G(+) All Types
MT2(+), G(-) All Types
MT2(-), G(-) All Types
MT2(-), G(+) All Types
(VD = Rated VDRM, RL = 10 KOhms ,TJ = 110 OC
MT2(+), G(+); MT2(-), G(-); MT2(+), G(-) All Types
MT2(-), G(+) All Types
VGT
0.1
0.1
2
2
2
2.5
V
Holding Current (VD = 12 Vdc, ITM = 200 mA, Gate Open)
IH
5
mA
Gate Controlled Turn-On Time
(VD = Rated VDRM, ITM = 1 Apk, IG = 25 mA)
tgt
2
μs
Critical Rate-of-Rise of Commutation Voltage
(f = 250 Hz, ITM = 1 A, Commutating di/dt = 1.5 A/ms, On-State
Current Duration=2ms, VDRM = 200 V, Gate Unenergized, TC = 110
O
C, Gate Source Resistance = 150 Ohms)
dv/dtc
1.5
V/μs
Critical Rate-of-Rise of Off Sate Voltage
(Vpk = Rated VDRM, TC = 110 OC,Gate Open, Exponential Method)
dv/dt
10
V/μs
1) V
DRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant
current source such that the voltage ratings of the devices are exceeded.



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