Any changing of specification will not be informed individual

SCS202NF

Dual Series Chips

Surface Mount Switching Diode

1

2

3

Marking code: MU or A3

3

1

2

K

J

C

H

L

A

B S

G

V

3

1

2

D

Top View

Construction

Silicon epitaxial planar

Rating

Symbol

Value

Unit

Peak reverse voltage

80

V

V

DC reverse voltage

80

Peak forward current

Mean rectifying current

300

100

mA

Surge current 1uS

4

A

mW

Power dissipation (TOTAL)

Pd

200

Junction temperature

150

Storage temperature

-55~+155

ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise noted) (EACH DIODE)

Characteristic

Symbol

Min

Max

Unit

Forward voltage

t rr

－

－

－

－

1.2

V

Reverse current

0.1

uA

Capacitance between terminals

(V=6V, f=1MHz)

Reverse recovery time

(IF=5mA,VR=6V)

4

3.5

pF

1. FR–5 = 1.0 X 0.75 X 0.062 in. 2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.

Dim

Min

Max

A

1.800

2.200

B

1.150

1.350

C

0.800

1.000

D

0.300

0.400

G

1.200

1.400

H

0.000

0.100

J

0.100

0.250

K

0.350

0.500

L

0.590

0.720

S

2.000

2.400

V

0.280

0.420

All Dimension in mm

SOT-323(SC-70)

http://www.SeCoSGmbH.com

Elektronische Bauelemente

ºC

ºC

Application

Ultra high speed switching

Features

Four types of packaging are available.

Suitable for high packing density layout.

High reliability.

01-Jun-2002 Rev. A

Page 1 of 3

mA

nS

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free