2SD2114 datasheet(1/3 Pages) SECOS

номер детали	2SD2114

подробное описание детали	NPN Plastic Encapsulated Transistor

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производитель	SECOS [SeCoS Halbleitertechnologie GmbH]

домашняя страница	http://www.secosgmbh.com

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Elektronische Bauelemente

2SD2114

0.5 A, 25 V

NPN Plastic Encapsulated Transistor

01-June-2005 Rev. A

Page 1 of 3

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead free

FEATURES

High DC current gain :hFE = 1200(Typ)

High emitter-base voltage. VEBO =12V (Min.)

Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC/IB=500mA / 20mA)

PACKAGE DIMENSIONS

ABSOLUTE MAXIMUM RATINGS at Ta = 25°C

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

VCBO

25

V

Collector to Emitter Voltage

VCEO

20

V

Emitter to Base Voltage

VEBO

12

V

Collector Current - Continuous

IC

500

mA

Collector Power Dissipation

Pc

250

mW

Junction, Storage Temperature

TJ, TSTG

+150, -55 ~ +150

℃

CHARACTERISTICS at Ta = 25°C

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

25

-

V

IC=10uA

BVCEO

20

-

V

IC=1mA

BVEBO

12

-

V

IE=10uA

ICBO

-

0.5

uA

VCB=20V

IEBO

-

0.5

uA

VEB=10V

*hFE1

820

-

2700

VCE=3V, IC=10mA

VCE(sat)

-

0.4

V

IC=500mA, IB=20mA

fT

-

350

-

MHz

VCE=10V, IC=50mA, f=100MHz

COB

-

8

-

pF

VCB=10V, IE=0, f=1MHz

R(ON)

-

0.8

-

Ω

VIN=0.1V(rms),IB=1mA, f=1KHZ

CLASSIFICATION OF hFE1

Rank

V

W

Range

820 - 1800

1200 - 2700

Marking

BBV

BBW

Collector

Base

Emitter

Dim

Min

Max

A

2.800

3.040

B

1.200

1.400

C

0.890

1.110

D

0.370

0.500

G

1.780

2.040

H

0.013

0.100

J

0.085

0.177

K

0.450

0.600

L

0.890

1.020

S

2.100

2.500

V

0.450

0.600

All Dimension in mm

SOT-23

K

J

C

H

L

A

B S

G

V

3

1

2

D

Top View

1

2

3

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