2SC4097 datasheet(2/3 Pages) SECOS

2 / 3 page

Elektronische Bauelemente

2SC4097

32V, 0.5A

Medium Power Transistor

ELECTRICAL CHARACTERISTICS (Ta = 25

)

TYPE NUMBER

SYMBOL

Min.

Typ.

Max.

UNIT

TEST CONDITIONS

Collector-Base Breakdown Voltage

BVCBO

IC = 100 µA

Collector-Emitter Breakdown Voltage

BVCEO

IC = 1 mA

Emitter-Base Breakdown Voltage

BVEBO

IE = 100 µA

Collector Cutoff Current

ICBO

µA

VCB = 20 V

Emitter Cutoff Current

IEBO

µA

VEB = 4 V

Collector-Emitter Saturation Voltage

VCE (sat)

0.4

IC / IB = 500 mA / 50 mA

DC Current Transfer Ratio

hFE

390

VCE = 3 V, IC = 100 mA

VCE = 5 V, IE = -20 mA,

Transition Frequency

250

MHz

f = 100 MHz

VCB = 10 V, IE = 0 A,

Output Capacitance

Cob

6.0

f = 1 MHz

hFE VALUES ARE CLASSIFIED AS FOLLOWS:

ITEM

hFE

82 ~ 180

120 ~ 270

180 ~ 390

Marking

ELECTRICAL CHARACTERISTIC CURVES

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

0.8

0.2

0.4

0.9

0.7

0.5

1.1

0.3

1.0

0.6

0.1

0.2

0.5

100

200

500

1000

T a 100

VCE

BASE TO EMITTER VOLTAGE : VBE

(

Fig.1

Grounded emitter propagation

characteristics

2345

100

0.50m

0.45m

0.40m

0.35mA

0.30mA

0.25mA

0.20mA

0.15mA

0.10mA

0.05mA

=0A

=25

COLLECTOR TO EMITTER VOLTAGE : VCE

(V)

Fig.2

Grounded emitter output

characteris tics ( )

2345

500

400

300

200

100

2mA

1.8mA

1.6mA

1.4mA

1.2mA

0.2mA

0.4mA

0.6mA

0.8mA

1.0mA

=0A

=25

COLLECTOR TO EMITTER VOLTAGE : VCE

(V)

Fig.3

Grounded emitter output

characteris tics ( )

01-Jun-2002 Rev. A

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