2SA1201 datasheet(1/2 Pages) SECOS

номер детали	2SA1201

подробное описание детали	PNP Silicon Epitaxial Planar Transistor

PDF	2 Pages

Scroll/Zoom	100%

производитель	SECOS [SeCoS Halbleitertechnologie GmbH]

домашняя страница	http://www.secosgmbh.com

Logo

1 / 2 page

FEATURES

High voltage

High transition frequency

Complementary to 2SC2881

MAXIMUM RATINGS (TA=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

-120

V

VCEO

Collector-Emitter Voltage

-120

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current -Continuous

-0.8

A

PC

Collector Power Dissipation

0.5

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=-1mA,IE=0

-120

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=-10mA,IB=0

-120

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-1mA,IC=0

-5

V

Collector cut-off current

ICBO

VCB=-120V,IE=0

-0.1

μA

Emitter cut-off current

IEBO

VEB=-5V,IC=0

-0.1

μA

DC current gain

hFE

VCE=-5V,IC=-100mA

80

240

Collector-emitter saturation voltage

VCE(sat)

IC=-500mA,IB=-50mA

-1

V

Base-emitter voltage

VBE

VCE=-5V,IC=-500mA

-1

V

Transition frequency

fT

VCE=-5V,IC=-100mA

120

MHz

Collector output capacitance

Cob

VCB=-10V,IE=0,f=1MHz

30

pF

CLASSIFICATION OF

hFE

Rank

O

Y

Range

80-160

120-240

Marking

DO

DY

Any changing of specification will not be informed individual

2SA1201

PNP Silicon

Epitaxial Planar Transistor

RoHS Compliant Product

http://www.SeCoSGmbH.com

Elektronische Bauelemente

08-May-2007 Rev. A

Page 1 of 2

SOT-89

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

4.4

4.6

G

3.00 REF.

B

4.05

4.25

H

1.50 REF.

C

1.50

1.70

I

0.40

0.52

D

1.30

1.50

J

1.40

1.60

E

2.40

2.60

K

0.35

0.41

F

0.89

1.20

L

5 q TYP.

M

0.70 REF.

Аналогичный номер детали - 2SA1201

производитель	номер детали	датащи	подробное описание детали
Toshiba Semiconductor	2SA1201	155Kb / 2P	TRANSISTOR (POWER AMPLIFIER APPLICATIONS)
Unisonic Technologies	2SA1201	99Kb / 3P	SILICON PNP EPITAXIAL TRANSISTOR
TRANSYS Electronics Lim...	2SA1201	63Kb / 1P	Plastic-Encapsulated Transistors
Toshiba Semiconductor	2SA1201	146Kb / 4P	Voltage Amplifier Applications Power Amplifier Applications
Guangdong Kexin Industr...	2SA1201	366Kb / 2P	Voltage Amplifier Applications

More results

Аналогичное описание - 2SA1201

производитель	номер детали	датащи	подробное описание детали
AUK corp	SUR532H	235Kb / 3P	Epitaxial planar PNP silicon transistor
	SUR546J	229Kb / 3P	Epitaxial planar PNP silicon transistor
	SUR550J	229Kb / 3P	Epitaxial planar PNP silicon transistor
Continental Device Indi...	CMBT857	115Kb / 3P	PNP EPITAXIAL PLANAR SILICON TRANSISTOR
Hi-Sincerity Mocroelect...	HSB649T	43Kb / 4P	SILICON PNP EPITAXIAL PLANAR TRANSISTOR
GTM CORPORATION	GI5706	948Kb / 3P	PNP EPITAXIAL PLANAR SILICON TRANSISTOR
Galaxy Semi-Conductor H...	KTA2015W	171Kb / 4P	PNP Silicon Epitaxial Planar Transistor
Galaxy Semi-Conductor H...	MMSTA92	131Kb / 2P	PNP Silicon Epitaxial Planar Transistor
Guangdong Kexin Industr...	2SA1772	44Kb / 2P	PNP Epitaxial Planar Silicon Transistor
SHENZHEN YONGERJIA INDU...	A92	207Kb / 4P	PNP Silicon Epitaxial Planar Transistor

More results

2SA1201 датащи(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

2SA1201 датащи(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

Аналогичный номер детали - 2SA1201

Аналогичное описание - 2SA1201

Html Pages

1 2

датащи скачать

ссылки URL