SIR892DP datasheet(1/7 Pages) VISHAY

номер детали	SIR892DP

подробное описание детали	N-Channel 25-V (D-S) MOSFET

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производитель	VISHAY [Vishay Siliconix]

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Vishay Siliconix

SiR892DP

New Product

Document Number: 68639

S-83048-Rev. B, 22-Dec-08

www.vishay.com

1

N-Channel 25-V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

•

TrenchFET® Power MOSFET

•

100 % Rg Tested

•

100 % UIS Tested

APPLICATIONS

•

Low-Side MOSFET in Synchronous Buck dc-to-dc

Converters

- Game Machine

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

ID (A)

a

Qg (Typ.)

25

0.0032 at VGS = 10 V

50a, g

20 nC

0.0042 at VGS = 4.5 V

50a, g

Ordering Information: SiR892DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

1

2

3

4

5

6

7

8

S

G

D

6.15 mm

5.15 mm

PowerPAK® SO-8

Bottom View

N-Channel MOSFET

G

D

S

Notes:

a. Based on TC = 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under Steady State conditions is 70 °C/W.

g. Package limited.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

25

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

50a, g

A

TC = 70 °C

50g

TA = 25 °C

30b, c

TA = 70 °C

24b, c

Pulsed Drain Current

IDM

70

Continuous Source-Drain Diode Current

TC = 25 °C

IS

50g

TA = 25 °C

4.5b, c

Single Pulse Avalanche Current

L = 0.1 mH

IAS

40

Single Pulse Avalanche Energy

EAS

80

mJ

Maximum Power Dissipation

TC = 25 °C

PD

50

W

TC = 70 °C

32

TA = 25 °C

5.0b, c

TA = 70 °C

3.2b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)d, e

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, f

t

≤ 10 s

RthJA

20

25

°C/W

Maximum Junction-to-Case (Drain)

Steady State

RthJC

2.0

2.5

Аналогичный номер детали - SIR892DP

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Vishay Telefunken	SIR892DP	343Kb / 13P	N-Channel 25-V (D-S) MOSFET
Vishay Siliconix	SIR892DP	344Kb / 13P	N-Channel 25-V (D-S) MOSFET 22-Dec-08
Vishay Siliconix	SIR892DP	344Kb / 13P	N-Channel 25-V (D-S) MOSFET 22-Dec-08

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