TIP31C

DISCRETE SEMICONDUCTORS

R

DC COMPONENTS CO., LTD.

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description

Designed for use in general purpose amplifier and

switching applications.

Pinning

1 = Base

2 = Collector

3 = Emitter

TO-220AB

Dimensions in inches and (millimeters)

.625(15.87)

.570(14.48)

.562(14.27)

.500(12.70)

.055(1.39)

.045(1.15)

.185(4.70)

.173(4.40)

.405(10.28)

.380(9.66)

.295(7.49)

.220(5.58)

.350(8.90)

.330(8.38)

.640

(16.25)

Typ

.055(1.40)

.045(1.14)

.037(0.95)

.030(0.75)

.100

(2.54)

Typ

.024(0.60)

.014(0.35)

Φ.151

Φ(3.83)

Typ

1 2 3

Characteristic

Symbol

Rating

Unit

Collector-Base Voltage

100

V

Collector-Emitter Voltage

100

V

Emitter-Base Voltage

5

V

Collector Current

3

A

40

W

Junction Temperature

+150

o

C

Storage Temperature

-55 to +150

o

C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Collector-Base Breakdown Volatge

100

-

-

V

Collector-Emitter Breakdown Voltage

100

-

-

V

Collector Cutoff Current

-

-

200

µA

-

-

300

µA

Emitter Cutoff Current

-

-

1

mA

-

-

1.2

V

-

-

1.8

V

25

-

-

-

10

-

50

-

Transition Frequency

3

-

-

MHz

Electrical Characteristics

(1)Pulse Test: Pulse Width

380

µs, Duty Cycle 2%