2SC945

DISCRETE SEMICONDUCTORS

R

DC COMPONENTS CO., LTD.

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description

Designed for use in driver stage of AF amplifier

applications.

Pinning

1 = Emitter

2 = Collector

3 = Base

Rank

Q

P

K

Range

135~270

200~400

300~600

TO-92

Dimensions in inches and (millimeters)

.022(0.56)

.014(0.36)

.050

(1.27)

.148(3.76)

.132(3.36)

Typ

.190(4.83)

.170(4.33)

.100

(2.54)

Typ

.050

(1.27)

Typ

.022(0.56)

.014(0.36)

.190(4.83)

.170(4.33)

.500

(12.70)

Min

3 2 1

Characteristic

Symbol

Rating

Unit

Collector-Base Voltage

60

V

Collector-Emitter Voltage

50

V

Emitter-Base Voltage

5

V

Collector Current

100

mA

Base Current

50

mA

Total Power Dissipation

250

mW

Junction Temperature

+150

o

C

Storage Temperature

-55 to +150

o

C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Collector-Base Breakdown Volatge

60

-

-

V

Collector-Emitter Breakdown Voltage

50

-

-

V

Emitter-Base Breakdown Volatge

5

-

-

V

Collector Cutoff Current

-

-

0.1

µA

Emitter Cutoff Current

-

-

0.1

µA

-

0.1

0.3

V

50

-

-

-

135

-

600

-

Transition Frequency

150

-

600

MHz

Output Capacitance

-

-

4

pF

Electrical Characteristics

(1)Pulse Test: Pulse Width

380

µs, Duty Cycle 2%