2N5740 datasheet(1/2 Pages) ISC

номер детали	2N5740

подробное описание детали	isc Silicon PNP Power Transistors

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Website：www.iscsemi.cn

isc Silicon PNP Power Transistors

2N5740

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= -100V(Min.)

·Low Collector Saturation Voltage-

: VCE(sat)= -0.5V(Max.)@ IC= -5A

·Wide Area of Safe Operation

APPLICATIONS

·Designed for general-purpose power amplifier and switching

applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-a

Thermal Resistance,Junction to Ambient

4.56

℃/W

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-100

V

VCEO

Collector-Emitter Voltage

-100

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-10

A

ICM

Collector Current-Peak

-20

A

IB

Base Current-Continuous

-4

A

PC

Collector Power Dissipation

@TC=100℃

20

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-65~200

℃

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