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2N3879 датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2N3879 датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3879 DESCRIPTION ·With TO-66 package ·Wide area of safe operation ·High sustaining voltage APPLICATIONS ·For high-speed switching and linear- amplifier applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 120 V VCEO(SUS) Collector-emitter sustaining voltage Open base 75 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 7 A ICM Collector current-Peak 10 A IB Base current 5 A PT Total power dissipation TC=25℃ 35 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-C Thermal resistance junction to case 5.0 ℃/W Fig.1 simplified outline (TO-66) and symbol |
Аналогичный номер детали - 2N3879 |
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Аналогичное описание - 2N3879 |
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