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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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LTC4067 датащи(PDF) 3 Page - Linear Technology |
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LTC4067 датащи(HTML) 3 Page - Linear Technology |
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3 / 20 page  LTC4067 3 4067f The ● denotes the specifications which apply over the full operating temperature range (Note 3), otherwise specifications are at TA = 25°C. Note 2 unless otherwise noted, VIN = 5V, VBAT = 3.7V, VILIM0 = 0V, VILIM1 = 0V, RPROG = 2k, RCLPROG = 2k, VOVI = 0V, VNTC = VIN/2. ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS VIUVLO IN Undervoltage Lockout Rising Threshold Falling Threshold ● 3.5 3.8 3.675 4V V VBUVLO BAT Undervoltage Lockout Rising Threshold Falling Threshold 2.5 2.8 2.7 3V Current Limit RFWD,IN On-Resistance of Input Power FET IOUT = 200mA 220 mΩ ILIM Input Current Limit HPWR Mode: VILIM0 = VILIM1 = 5V LPWR Mode ● ● 475 90 500 98 525 110 mA mA VCLPROG CLPROG Pin Servo Voltage HPWR Mode: VILIM0 = VILIM1 = VCC, VOUT = 4V LPWR Mode : VOUT = 4V ● ● 0.95 0.18 1 0.2 1.05 0.22 V V ISS Soft Start Inrush Current RCLPROG = 4k, Short at OUT (Note 8) 0.3 mA/μs Battery Charger VFLOAT Regulated Output Voltage IBAT = –2mA (0°C – 85°C); IBAT = –2mA 4.185 4.167 4.2 4.2 4.215 4.234 V V ICC-CHG Constant-Current Mode Charge Current RPROG = 2k, No Load at OUT RPROG = 1k, No Load at OUT, RCLPROG = 1k ● ● 470 940 500 1000 530 1060 mA mA ICHG(MAX) Maximum Charge Current RPROG = RCLPROG = 0 (Note 7) 2 A VPROG PROG Pin Servo Voltage RPROG = 2k; IBAT = –500mA RPROG = 1k; IBAT = –1A RPROG = 2k, VBAT < VTRIKL, IBAT = ITRIKL ● ● 980 980 90 1000 1000 100 1020 1020 110 mV mV mV IEOC End-of-Charge BAT Current VBAT = 4.2V; As A Ratio to Full BAT Charge Current (ICC-CHG) 0.08 0.093 0.106 mA/mA ITRIKL Trickle Charge Current VBAT = 2V 35 50 60 mA VRECHRG Recharge Battery Threshold Voltage VFLOAT – VRECHRG ● 65 100 135 mV tTIMER TIMER Period 1.7 2 2.3 hrs Low Battery Trickle Charge Time Percent of Total Charge Time, VBAT < 2.8V 25 % TLIM Junction Temperature in Constant Temperature Mode (Note 4) 105 °C Ideal Diode RFWD On-Resistance, VON Regulation VILIM0 = 0V, VILIM1 = 5V, VBAT = 4.3V, IOUT = –200mA, Measured as ΔV/ΔI 200 mΩ RDIO,ON On-Resistance VBAT to VOUT VILIM0 = 0V, VILIM1 = 5V, VBAT = 4.3V, IOUT = –1A 220 mΩ VFWD Voltage Forward Drop (VBAT – VOUT)VILIM0 = 0V, VILIM1 = 5V, VBAT = 4.3V, IOUT = –1mA VILIM0 = 0V, VILIM1 = 5V, VBAT = 4.3V, IOUT = –200mA VILIM0 = 0V, VILIM1 = 5V, VBAT = 4.3V, IOUT = –1A ● 10 25 70 240 40 mV mV mV ID(MAX) Ideal Diode Current Limit VILIM0 = 0V, VILIM1 = 5V, VBAT = 4.3V (Notes 4, 5) 1.5 2.1 A IGPU GATE Pin Output Pull Up Current VOUT > VBAT, VGATE = 0V 1.9 mA IGPD GATE Pin Output Pull Down Current VILIM0 = 0V, VILIM1 = 5V, VBAT = 4.3V, IOUT = 1A, VGATE = 4.3V 1.9 mA |
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