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STU309D датащи(PDF) 3 Page - SamHop Microelectronics Corp.

номер детали STU309D
подробное описание детали  Dual E nhancement Mode F ield E ffect Transistor ( N and P Channel)
PDF  11 Pages
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производитель  SAMHOP [SamHop Microelectronics Corp.]
домашняя страница  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STU309D датащи(HTML) 3 Page - SamHop Microelectronics Corp.

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S T U309D
=
Parameter
S ymbol
Condition
Min Typ Max Unit
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage
BVDSS
=
VGS 0V, ID -250uA
=
-30
V
Zero Gate Voltage Drain Current
IDSS
VDS -24V, VGS 0V
=
=
-1
Gate-Body Leakage
IGSS
VGS
20V, VDS 0V
=
=
10
uA
ON CHAR ACTE R IS TICS
a
Gate Threshold Voltage
VGS(th)
VDS VGS, ID = -250uA
=
V
Drain-S ource On-S tate R esistance
R DS(ON)
VGS -10V, ID -6A
VGS -4.5V, ID -4A
55
On-S tate Drain Current
ID(ON)
VDS = -5V, VGS = -10V
A
S
Forward Transconductance
FS
g
VDS -10V, ID -6A
DYNAMIC CHAR ACTE R IS TICS
b
Input Capacitance
CISS
CRSS
COSS
Output Capacitance
R everse Transfer Capacitance
VDS =-15V, VGS = 0V
f =1.0MHZ
P
F
P
F
P
F
S WITCHING CHAR ACTE R IS TICS
b
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
tD(ON)
tr
tD(OFF)
tf
VDD = -15V
ID = -1A
VGS = -10V
R GEN = 6 ohm
ns
ns
ns
ns
Total Gate Charge
Gate-S ource Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDS =-15V, ID = -20 A
VGS =-10V
nC
nC
nC
C
Fall Time
=
=
=
=
=
=
3
5
35
uA
m ohm
m ohm
P-Channel ELECTRICAL CHARACTERISTICS (TA 25 C unless otherwise noted)
VDS =-15V,ID =-20A,VGS =-10V
nC
VDS=-15V,ID =-20A,VGS =-4.5V
-20
130
220
850
16
35
75
15
12
4.7
1.6
8
10
ohm
R g
Gate resistance
VGS =0V, VDS = 0V, f=1.0MHZ
4
-1
-3
-1.9
28
44



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