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STM8458 датащи(PDF) 4 Page - SamHop Microelectronics Corp.

номер детали STM8458
подробное описание детали  Dual Enhancement Mode Field Effect Transistor ( N and P Channel )
PDF  11 Pages
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производитель  SAMHOP [SamHop Microelectronics Corp.]
домашняя страница  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STM8458 датащи(HTML) 4 Page - SamHop Microelectronics Corp.

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STM8458
www.samhop.com.tw
Jun,12,2008
4
T j ( °
C )
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
ID, Drain Current(A)
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. On-Resistance Variation with Drain
Current and Temperature
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Tj, Junction Temperature(° C )
Figure 6. Breakdown Voltage Variation
with Temperature
N-Channel
20
12
8
4
0
0
0.8
1.6
2.4
3.2
4.0
4.8
16
T j =125 C
-55 C
25 C
60
48
36
24
12
0
8
16
24
32
40
1
V G S =10V
V G S =4.5V
72
1.5
1.4
1.3
1.2
1.1
1.0
0.0
0
25
50
75
100
125
V G S =10V
ID=6.3A
V G S =4.5V
ID=5.5A
150
40
32
24
16
8
0
0
0.5
1
1.5
2
2.5
3
V GS =2.5V
V GS =3V
V GS =3.5V
V GS =4V
V GS =4.5V
V GS =10V
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
-50 -25
0
25
50
75
100 125 150
V DS =V GS
ID=250uA
-50
-25
0
25
50
75
100 125 150
0.95
0.90
0.85
ID=250uA
1.00
1.05
1.10
1.15
Ver 1.0



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