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STM8455 датащи(PDF) 4 Page - SamHop Microelectronics Corp.

номер детали STM8455
подробное описание детали  Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)
PDF  11 Pages
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производитель  SAMHOP [SamHop Microelectronics Corp.]
домашняя страница  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STM8455 датащи(HTML) 4 Page - SamHop Microelectronics Corp.

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E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted)
Notes
c.Guaranteed by design, not subject to production testing.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
F igure 2. Transfer C haracteristics
F igure 4. On-R esistance Variation with
Drain C urrent and Temperature
ID, Drain C urrent (A)
V GS , G ate-to-S ource Voltage (V )
4
S TM8455
45
40
35
30
25
20
1
15
12
9
6
0
0
0.8
1.6
2.4
3.2
4.0
4.8
2.0
1.8
1.6
1.4
1.2
1.0
0
0
100
T j( C )
75
25
50
T j, J unction T emperature ( C )
F igure 1. Output C haracteristics
V DS , Drain-to-S ource Voltage (V )
15
12
9
6
3
0
0.5
1
1.5
2
2.5
3
V GS =3V
V GS =4.5V
F igure 3. On-R esistance vs. Drain C urrent
and G ate V oltage
3
6
9
12
15
1
V GS =10V
V GS =4.5V
V GS =4.5V
ID=4A
3
T j=125 C
-55 C
V GS =8V
125
V GS =10V
ID=5A
a.Surface Mounted on FR4 Board, t <=10sec.
Parameter
Symbol
Condition
Min Typ Max Unit
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
VSD
VGS = 0V, Is =1.7A
N-Ch
0.8
1.3
-0.77
-1.3
VGS = 0V, Is =-1.7A
P-Ch
V
b
C
N-Channel
25 C
V GS =10V
150
V GS =3.5V



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