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STP434S датащи(PDF) 3 Page - SamHop Microelectronics Corp. |
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STP434S датащи(HTML) 3 Page - SamHop Microelectronics Corp. |
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3 / 8 page ![]() STB/P434S Ver 1.0 www.samhop.com.tw Nov,14,2008 3 T j ( ° C ) VDS, Drain-to-Source Voltage(V) Figure 1. Output Characteristics VGS, Gate-to-Source Voltage(V) Figure 2. Transfer Characteristics ID, Drain Current(A) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Tj, Junction Temperature(° C ) Figure 6. Breakdown Voltage Variation with Temperature 80 60 40 20 0 0 0.5 1 1.5 2 2.5 3 100 V GS =10V V GS =3V V GS =2.5V V GS =3.5V V GS =4V 60 48 36 24 0 0 0.7 1.4 2.1 2.8 3.5 4.2 12 25 C -55 C T j=125 C 16 12 8 4 1 20 40 60 80 100 1 VGS=10V VGS=4.5V 20 2.0 1.8 1.6 1.4 1.2 1.0 0 0 25 50 125 100 75 VGS=10V ID=30A VGS=4.5V ID=25A 150 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 V DS =V GS ID=250uA -50 -25 0 25 50 75 100 125 150 1.40 1.30 1.20 1.10 1.00 0.90 0.80 ID=250uA |
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