AOT412L datasheet(2/7 Pages) AOSMD

2 / 7 page

AOT412

Symbol

Min

Typ

Max

Units

BVDSS

100

VDS=100V, VGS=0V

TJ=55°C

IGSS

100

VGS(th)

Gate Threshold Voltage

2.6

3.2

3.8

ID(ON)

140

13.2

15.8

TJ=125°C

15.5

19.4

Ω

gFS

VSD

0.65

Ciss

2150

2680

3220

Coss

180

260

340

Crss

100

140

0.5

1.5

Ω

Qg(10V)

Qg(4.5V)

Qgs

Qgd

915

tD(on)

tD(off)

trr

Qrr

125

Rev 0: Nov-08

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Body Diode Reverse Recovery Time

Drain-Source Breakdown Voltage

On state drain current

ID=250µA, VGS=0V

VGS=10V, VDS=5V

VGS=10V, ID=20A

Reverse Transfer Capacitance

IF=20A, dI/dt=500A/µs

VGS=0V, VDS=50V, f=1MHz

SWITCHING PARAMETERS

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

IDSS

µA

VDS=VGS ID=250µA

VDS=0V, VGS= ±25V

Zero Gate Voltage Drain Current

Gate-Body leakage current

Forward Transconductance

Diode Forward Voltage

RDS(ON)

Static Drain-Source On-Resistance

Ω

IS=1A,VGS=0V

VDS=5V, ID=20A

VGS=7V, ID=20A

Gate resistance

VGS=0V, VDS=0V, f=1MHz

Turn-Off Fall Time

Total Gate Charge

VGS=10V, VDS=50V, ID=20A

Gate Source Charge

Gate Drain Charge

Total Gate Charge

Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

Turn-On DelayTime

DYNAMIC PARAMETERS

Turn-On Rise Time

Turn-Off DelayTime

VGS=10V, VDS=50V, RL=5Ω,

RGEN=3Ω

A. The value of RθJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C. The Power

dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the

user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.

B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation

limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ

=25°C.

D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a

maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.

G. The maximum current rating is limited by bond-wires.

H. These tests are performed with the device mounted on 1 in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C.

Alpha & Omega Semiconductor, Ltd.

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