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TSMS3700 датащи(PDF) 3 Page - Vitesse Semiconductor Corporation

номер детали TSMS3700
подробное описание детали  GaAs Infrared Emitting Diode in SMT Package
PDF  6 Pages
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производитель  VITESSE [Vitesse Semiconductor Corporation]
домашняя страница  http://www.vitesse.com
Logo VITESSE - Vitesse Semiconductor Corporation

TSMS3700 датащи(HTML) 3 Page - Vitesse Semiconductor Corporation

  TSMS3700 Datasheet HTML 1Page - Vitesse Semiconductor Corporation TSMS3700 Datasheet HTML 2Page - Vitesse Semiconductor Corporation TSMS3700 Datasheet HTML 3Page - Vitesse Semiconductor Corporation TSMS3700 Datasheet HTML 4Page - Vitesse Semiconductor Corporation TSMS3700 Datasheet HTML 5Page - Vitesse Semiconductor Corporation TSMS3700 Datasheet HTML 6Page - Vitesse Semiconductor Corporation  
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TSMS3700
Vishay Telefunken
3 (6)
Rev. 3, 01-Aug-00
www.vishay.com
Document Number 81037
Typical Characteristics (Tamb = 25_C unless otherwise specified)
0
20
406080
0
50
100
150
200
250
Tamb – Ambient Temperature ( °C )
100
94 8029 e
RthJA
Figure 1. Power Dissipation vs. Ambient Temperature
0
20
406080
0
25
50
75
100
125
Tamb – Ambient Temperature ( °C )
100
94 7916 e
RthJA
Figure 2. Forward Current vs. Ambient Temperature
0.01
0.1
1
10
1
10
100
1000
10000
tp – Pulse Length ( ms )
100
95 9985
DC
tp/T=0.005
0.5
0.2
0.1
0.01
0.05
0.02
Tambv60°C
Figure 3. Pulse Forward Current vs. Pulse Duration
01
2
3
VF – Forward Voltage ( V )
4
94 7996 e
101
100
102
103
104
10–1
Figure 4. Forward Current vs. Forward Voltage
0
20
406080
0.7
0.8
0.9
1.0
1.1
1.2
Tamb – Ambient Temperature ( °C )
100
94 7990 e
IF = 10 mA
Figure 5. Relative Forward Voltage vs.
Ambient Temperature
IF – Forward Current ( mA )
94 7956 e
103
101
102
104
100
0.1
1
10
100
Figure 6. Radiant Intensity vs. Forward Current



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